p-type semiconductor

1. In electronics, an interface between a P-type and N-type semiconductor material; such an interface produces a diode effect.
   在电子技术中，一种P型和N型半导体材料之间的界面，这种界面可以产生二极管效应。
2. The surface in the transition region between p-type and n-type semiconductor material at which the donor and acceptor concentration are equal.
   在p型和n型半导体材料之间渡越区中的一个面，在这里施主杂质和受主杂质的浓度相等。
3. Then we subject the semiconductor to impurity doping, which turns it into either a p-type or an n-type semiconductor.
   然后我们使半导体经过渗杂，以将其转变成p型或n型半导体。
4. Study on Raman Spectra of p-type Semiconductor ZnO thin Films
   P型半导体氧化锌薄膜的Raman光谱研究
5. The high figure of merit p-type and n-type pseudo-ternary Bi_2Te_3-Sb_2Te_3-Sb_2Se_3 Semiconductor cooling materials, which give the highest figure of merit of 3.2 × 10~ (-3)/ K at near room temperature, have been developed.
   研究出高优值系数的P型和N型赝三元系Bi2Te3-Sb2Te3-Sb2Se3半导体致冷材料，在室温附近最高优值可达到3.2×10~（-3）/K以上。
6. Na-doped model shows the character of p-type semiconductor, and Ni-doped model is n-type semiconductor.
   掺Na后材料具有p型半导体的特性，而掺Ni后则具有n型半导体的特性。
7. Study on Dosimetry Characteristics of P-type Semiconductor Detector in Radiotherapy
   P-型半导体探测器在放射治疗中的剂量特性研究
8. NiO is a kind of P-type semiconductor due to metal vacancies.
   NiO是一种由金属缺位而形成的P型半导体，在较高的温度下（600℃以上），NiO材料的电阻率与氧分压有关，而且杂质对其性能影响很大。
9. The methods and results about synthesis of B doped P-type diamond films on the single crystal silicon substrates by CVD method with the pyrolytic filament were reported. The systemic investigation of their structure, properties of semiconductor and luminosity was made.
   本文报导了利用灯丝热解CVD方法在单晶硅衬底表面气相合成硼掺杂p-型金刚石薄膜的方法和结果，并对其晶体结构、半导体性质及发光特性进行了较为系统的研究。
10. It was found that when a negative electric field reached a certain value, the external electric field of photovoltaic response will prevail, which attested that the conductivity of ZnFe_2O_4 corresponds to its p-type semiconductor characteristics. Owing to the contribution from the d-orbit of the transition metal.
    而当负电场达到一定值时，外电场的光伏响应将占据主导地位，证实ZnFe2O4为p型半导体，这与ZnFe2O4过渡金属的d轨道性质有关。
11. With Hall-voltage test, Hall coefficient ( RH)-temperature ( T) curves are determined, and at low temperature range quasi p-type and n-type semiconductor characteristics are found.
    测出它们的霍耳系数与温度的关系RH-1/T曲线，发现低温区有类p-型和n-型两类半导体特性。
12. An Effective Computation Method for p-type Semiconductor Quantum Well
    p型半导体量子阱的有效计算方法
13. Theoretical and Experimental Evidences of the Hall Coefficient Extremum in p-Type Semiconductor
    p型半导体霍尔系数极值新结论的理论与实验验证
14. For calcium cobalt oxide ( Ca3Co2O6) which is a P-type semiconductor, the thermoelectric properties is as good as other Co-based oxide thermoelectric materials.
    Ca3Co2O6是一个P型半导体材料，它的热电性能和Co的其它的氧化物热电材料性能不相上下。
15. Improvement Effect of n-and p-type Organic Semiconductor Coating Layer on Performance of Pentacene Organic Thin Film Transistors
    n-和p-型有机半导体涂层对五并苯薄膜晶体管性能促进效应
16. By means of this property, the connect lines, P-type semiconductor or N-type semiconductor, P-N junction, and 2D and 3D integrated circuit connection can be made.
    利用这个特性，可制作导电图样，制作连线，制作P型半导体材料和N型半导体材料，制作PN结，制作二维和三维集成电路互连接。
17. The results have shown that the P-type semiconductor ( pyrite as a typical one) displayed a good Na2S-induced flotation behavior, but the N-type one ( galena as a typical one) a good self-induced flotation behavior.
    结果表明，P型半导体（以黄铁矿为典型代表）具有良好硫化钠诱导浮选行为，N型半导体（以方铅矿为典型代表）具有良好自诱导浮选行为。
18. P-type CuAlO_2 semiconductor ceramic material prepared by sintering
    P型CuAlO2半导体陶瓷的烧结研究
19. Transport properties of p-type β-FeSi_2 semiconductor prepared by rapid solidification
    快速凝固β-FeSi2半导体的热电性能
20. NiFe 2O 4 is a new P-type semiconductor material.
    NiFe2O4是一种新型的P型半导体气敏材料。
21. P-type semiconductor of CuAlO_2 nanocrystals were synthesized by the hydrothermal-decomposition using newly prepared Cu_2O and Al ( OH)_3 as reactants.
    采用新制备的Cu2O和Al（OH）3为反应原料，利用水热-分解法制备了p型半导体CuAlO2纳米晶。
22. With n-hexyl groups attached to the framework, the new materials show p-type semiconductor properties.
    取代基为正己基的新化合物为p型半导体。
23. Different types ( n-type or p-type) of cuprous oxide semiconductor were prepared with different types of surfactants by wet reduction method.
    利用不同类型的表面活性剂通过湿法还原的方法制备了不同类型（n-型或者p型）的氧化亚铜半导体。
24. The surface photovoltaic property of the belt-like ZnO was studied, which shows a p-type semiconductor. 2.
    研究了ZnO纳米带的表面光伏特性，发现其具有p-型半导体特性。
25. NiO is a p-type semiconductor material with typical 3d electron structure oxide. Its band gap is between 3.6-4.0 eV.
    氧化镍是具有典型的3d电子结构的氧化物半导体，是一种p型半导体材料，禁带宽度是在3.6～4.0eV之间。
26. The nickel oxide is a p-type semiconductor, which has good chemical stability, high physical performance, environmentally friendliness, low price, ease of industrialization, and peculiar properties in gas sensor and super-capacitors, and thus has broad application prospects.
    氧化镍是一种p型半导体材料，其化学性能稳定，物理性能优良，环境友好度高，价格低廉且易于产业化，在超级电容器及气敏性器件等方面拥有广阔的应用前景。
27. By doping donor element in the film, P-type semiconductor film will be achieved, and this is quite essential for the development of semiconductor materials with P-N junction.
    而通过在薄膜中掺杂受主元素，可以获得P型半导体薄膜，从而对于发展具有P-N结结构的半导体材料有重大帮助。
28. Cuprous oxide ( Cu2O) is an important inorganic compounds and inorganic chemical raw materials. And it is a p-type semiconductor. Because of a special optical, magnetic, electrical properties, Cu2O has a wide range of applications in many areas.
    Cu2O是重要的无机化合物，是一种P-型半导体材料，同时也是一种重要的无机化工原料，由于具有特殊的光学、磁学、电学性质，在许多领域中都有着广泛的应用。
29. Cu2O is a p-type semiconductor with a band gap of 2.17 eV, it can be activated by the visible light, thus, the clean energy solar energy can be effectively utilized.
    Cu2O是一种p型半导体，其禁带宽度仅为2.17eV，能被太阳光中的可见光激发，因此能充分利用清洁能源太阳能。

noun

1. a semiconductor in which electrical conduction is due chiefly to the movement of positive holes